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Integrated optical NOR gate

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7 Author(s)
Beyette, F.R., Jr. ; Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA ; Geib, K.M. ; Feld, S.A. ; An, X.
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A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and light emitting diode InGaAs-InP structure grown by gas source molecular beam epitaxy. Operation up to 500 kHz is demonstrated for devices fabricated with 250- mu m*250- mu m mesas. Analysis indicates that operation at frequencies up to 50-100 MHz is possible for smaller mesa areas. ON/OFF optical contrast ratios as high as 30 were measured.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 4 )

Date of Publication:

April 1992

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