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Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions

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2 Author(s)
Fonseca, J. ; Ohio Univ., Athens, OH, USA ; Kaya, S.

The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green's function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.

Published in:

Semiconductor Device Research Symposium, 2003 International

Date of Conference:

10-12 Dec. 2003