By Topic

Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. Fonseca ; Ohio Univ., Athens, OH, USA ; S. Kaya

The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green's function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.

Published in:

Semiconductor Device Research Symposium, 2003 International

Date of Conference:

10-12 Dec. 2003