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An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implants

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4 Author(s)
Fathi, E. ; Dept. of ECE, Tehran Univ., Iran ; Afzal, B. ; Fathipour, M. ; Khakifirooz, A.

The use of original shift-and-ratio method for Leff extraction of MOS transistors with halo/pocket implants results in systematic errors for Leff. A modification of the original method has been proposed and tested by simulation. The values of Leff generated by this method are more reasonable than the original shift-and-ratio method.

Published in:

Semiconductor Device Research Symposium, 2003 International

Date of Conference:

10-12 Dec. 2003

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