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Design and fabrication of 1×2 InP-based MEMS moving waveguide optical switch with low switching voltage and low loss is presented. The basic layer structure of the waveguide is 4 μm thick and consists of 1.8 μm In0.53Ga0.47As sacrificial layer grown by MBE on a (100) semi-insulating InP substrate. Mechanical and optical design characteristics of this device is also presented. The waveguides are designed with Δn=0.02 and a cross section of 2 μm by 2 μm which minimizes the coupling loss between input and output waveguides.