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A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase

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6 Author(s)
Wang, Y. ; Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA ; Zhao, Y. ; Khan, B.M. ; Doherty, C.L.
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A novel SONOS (polysilicon-oxide-nitride-oxide-silicon) nonvolatile flash memory device which uses hot hole injection through the bottom oxide for write and tunneling to/from the gate through a thin top oxide for erase, with reduced power consumption, improved retention and subthreshold swing is proposed. The dynamic characteristics along with comparisons to NROM technology, forward/reverse read IDS ∼ IGS characteristics, programming speeds and retention of SONOS device at room temperature are discussed.

Published in:

Semiconductor Device Research Symposium, 2003 International

Date of Conference:

10-12 Dec. 2003