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A systematic study of tunneling leakage current in metal gate MOFETs is carried out and the physical model used were corroborated by experiments. Effects of metal gate work function on tunnelling characteristics and the criterion for choosing suitable metal gate results in significant reduction of gate-SDE tunnelling. As a result, SOI FETs exhibit much lower off-state leakage than the bulk ones, particularly for high-K dielectric, indicating their superior scalability in terms of leakage currents.
Date of Conference: 10-12 Dec. 2003