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Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN films

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9 Author(s)
Cheng-Wei Huang ; Dept. of Mater. Sci. & Eng., Feng Chia Univ., Taichung, Taiwan ; Su-Fen Tseng ; Cheng-Liang Wang ; Tsai, Yu-Li
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In this paper, we report the role played by AlGaN/GaN short period strained-layer superlattices (SPSLS) on the threading dislocation (TD) density reduction in GaN films. TD annihilation and de-multiplication processes were observed to account for the etching pit densities (EPD) reduction in GaN films involving AlGaN/GaN intermediate SPSLS structures. Transmission electron microscopy (TEM) was employed to characterize the microstructural properties of GaN films.

Published in:

Semiconductor Device Research Symposium, 2003 International

Date of Conference:

10-12 Dec. 2003