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Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

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3 Author(s)
Dudley, J.J. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Crawford, D.L. ; Bowers, J.E.

The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 degrees C to 105 degrees C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP ( lambda /sub gap/=1.15 mu m), GaAs/AlAs, and Si/SiN/sub x/. The linear shifts in center wavelength are 0.110+or-0.003 nm/ degrees C, 0.087+or-0.003 nm/ degrees C, and 0.067+or-0.007 nm/ degrees C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 4 )

Date of Publication:

April 1992

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