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Semiconductor gas sensors are devices based on metallic oxides that operate at high temperatures for achieving good sensitivities to the gases of interest. Silicon micromachined structures are often used as platforms for obtaining both high temperatures and low-power consumption at the same time. In this paper, a microstructure based on the combination of micromachined silicon substrates and glass wafers is presented. The device incorporates an array of four different thin-film gas sensors that, depending on the design, can operate at the same or at different temperatures. The designs have been optimized by the finite element method (FEM) and the geometrical parameters of the structure have been selected in order to reduce the power consumption. The full process fabrication is presented. It is based on the combination of bulk micromachining, glass structuring, anodic bonding, and sensitive material deposition. Electrical, thermal, and mechanical tests have been done to demonstrate that the devices show high robustness and can reach high temperatures with low-power consumption.
Date of Publication: April 2004