By Topic

Inverse-Geometry Dependence of MOS Transistor Electrical Parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hsu, M.C. ; Department of Electrical Engineering and Information Sciences Institute, University of Southern California, Los Angeles, CA, USA ; Sheu, B.J.

Precise determination of transistor electrical parameters is essential for accurate circuit simulation. The strong geometric dependences of MOS transistor electrical parameters can be modeled by the inverse-geometry formula. However, special care is needed in using the inverse-geometry formula. To prevent the short-channel and narrow-width effects being adversely mirrored to the drain-current evaluation of large transistors, we propose to clamp the dependences of transistor electrical parameters on small-geometry effects at a boundary (L CLP, W CLP). In principle three transistors with two different channel lengths and two different channel widths are required to extract the geometric dependence of various electric parameters. Our analysis shows that a set of five test transistors can increase the extraction accuracy by a factor of two, and thus is a better choice when both the modeling accuracy and test clip complexity are considered.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:6 ,  Issue: 4 )