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A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

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4 Author(s)
Chan, P.C. ; Intel Corporation, Santa Clara, CA, USA ; Liu, R. ; Lau, S.K. ; Pinto-Guedes, M.

A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:6 ,  Issue: 4 )