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Analysis of MOSFET Capacitances and Their Behavior at Short-Channel Lengths Using an AC Device Simulator

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3 Author(s)
Y. Ohkura ; Central Research Laboratory, Hitachi Ltd., Tokyo, Japan ; T. Toyabe ; H. Masuda

Intrinsic MOSFET capacitances are calculated using the three-dimensional ac device simulator CADDETH, and distributions of the internal ac currents are studied. The simulations clearly show the influence of velocity saturation. Finally short-channel effects on the intrinsic MOSFET capacitances are analyzed.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:6 ,  Issue: 3 )