By Topic

A Two-Dimensional Etching Profile Simulator: ESPRIT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yamamoto, S. ; Central Research Laboratory, Hitachi Ltd., Tokyo, Japan ; Kure, T. ; Ohgo, M. ; Matsuzawa, T.
more authors

A two-dimensional etching simulator named ESPRIT (FOOTNOTE: ESPRIT--Etching Simulation PRogram with an Improved sTring model.) has been developed to simulate LSI patterning. The etching simulator includes isotropic and anisotropic components. Its calculation method is based on the string model. ESPRIT can simulate etched profiles for multilayers with different etching rates and calculate side etching using sloped incidental anisotropic components. In addition, location correction, loop elimination, point insertion, and point elimination are provided for stable and accurate calculations. Simulated profiles coincide well with those from experiments in terms of relationship between the groove width and etched depth. ESPRIT can support to design LSI patterning process.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:6 ,  Issue: 3 )