By Topic

A New Two-Dimensional Silicon Oxidation Model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Isomae, Seiichi ; Central Research Laboratory, Hitachi Ltd., Tokyo, Japan ; Yamamoto, S.

This paper describes a new two-dimensional silicon oxidation model taking into consideration the deformation of silicon. In the model based on the steady-state oxidant diffusion and viscoelastic deformation of the oxide, it is assumed that the oxide is composed of two layers during the deformation of the oxide. Simulated results on a LOCOS structure were obtained using the boundary element method (BEM). It is proved that the present model can analyze oxidation-induced stress in the silicon substrate, which is not explained by previous models, as well as predict the oxide shape.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:6 ,  Issue: 3 )