By Topic

Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Iwai, H. ; Semiconductor Device Engineering Laboratory, Toshiba Research and Development Center, Kawasaki,Japan ; Pinto, M.R. ; Rafferty, C.S. ; Oristian, J.E.
more authors

In order to analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree well. The causes of short-channel effects have been understood and explained by the simulations. Two-dimensional effects and velocity saturation are the main causes of short-channel effects in MOS transistor capacitances. Two-dimensional simulation was found to be a useful tool for studying mobility models, as well as for obtaining capacitance models for circuit simulation.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:6 ,  Issue: 2 )