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Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances

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5 Author(s)
H. Iwai ; Semiconductor Device Engineering Laboratory, Toshiba Research and Development Center, Kawasaki,Japan ; M. R. Pinto ; C. S. Rafferty ; J. E. Oristian
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In order to analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree well. The causes of short-channel effects have been understood and explained by the simulations. Two-dimensional effects and velocity saturation are the main causes of short-channel effects in MOS transistor capacitances. Two-dimensional simulation was found to be a useful tool for studying mobility models, as well as for obtaining capacitance models for circuit simulation.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:6 ,  Issue: 2 )