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A charge-based table lookup MOSFET capacitance model is derived for a circuit simulation application. Measured Cgs(Vds, Vgs) and Cgd(Vds, Vgs) tables and a calculated Q(Vds, Vgs) table are utilized for representing nonlinear MOSFET capacitance behavior. The substrate terminal effect for Cgs and Cgd is expressed by using the plural sets of charge and capacitance tables, in which each set is defined at a specified substrate voltage. Not only the short-channel effect, but also the subthreshold capacitance characteristics, can be accurately modeled by the experimental data without any analytical approximations.