By Topic

A Fast-Timing Simulator for Digital MOS Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tsao, D. ; AT&T Bell Laboratories, Murray Hill, NJ, USA ; Chin-Fu Chen

An efficient and accurate algorithm has been developed for predicting the timing waveforms of general MOS transistor circuits. The algorithm uses a switch-level simulation technique to determine the steady-state conditions, a forward prediction method to predict the transient time between two adjacent voltage levels, a simplified timing simulation technique to correct this delay, and novel approaches for controlling the voltage step automatically. The simulation is further speeded up by the use of a table lookup model to calculate the transistor current and macromodels to evaluate certain circuit structures. This algorithm has been implemented as a new simulation mode, called fast timing, in the MOTIS3 multilevel mixed-mode simulator. Many production chips have been verified, and the results show that the fast-timing simulation can be three orders of magnitude faster than a conventional circuit analysis program such as SPICE, one order of magnitude faster than the MOTIS3 timing simulation, and only five times slower than the MOTIS3 unit-delay, switch-level evaluator. The delay accuracy of the new simulator is within 5 percent of the timing simulation.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:5 ,  Issue: 4 )