Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

A Composite Two-Dimensional Process/Device Simulation System (TOPMODE) and its Application for Total Process Designing in Submicron VLSI MOS Device Phase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Onga, Shinji ; Toshiba Research and Development Center, Toshiba Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan ; Konaka, M. ; Ohmichi, A. ; Kanaka, K.
more authors

A new composite two-dimensional process/two-dimensional device simulation system (TOPMODE) (FOOTNOTE: Standing for TOshiba Simulation Program for MOS DEvice.) has been developed to provide a straightforward means of predicting small-geometry device characteristics using the fabrication process sequence. Using TOP-MODE, an analysis of the anomalous subthreshold drain current peculiar to buried oxide isolation (BOX) structure device has been conducted and the physical mechanism is attributed to the impurity profile and other geometry effects. Input to TOPMODE is specially designed using key words language as a user-oriented CAD tool. Plotting functions for multidimensional perspective drawing of output results have also been installed to provide a better visual aid.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:5 ,  Issue: 3 )