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Modeling of Minority Carrier Current in Heavily Doped Regions of Bipolar Regions

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1 Author(s)
Kuzmicz, W. ; Department of Electrical and Computer Engineering, Carnegie-Mellon University, Pittsburgh, PA, USA

Two new algorithms for calculation of minority carrier current injected into a heavily doped region are presented and compared with the algorithm proposed by Del Alamo [4]. The algorithms are based on numerical solution of a single differential equation derived from basic system of the semiconductor transport equations. This equation may have several different forms that are equivalent mathematically, but lead to numerical algorithms that differ significantly in their efficiency. A comparative study of the factors limiting the accuracy and efficiency of these algorithms shows that it is possible to achieve efficiency high enough for applications in statistical process/device simulators where hundreds or thousands of simulations per one program run have to be performed.

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:5 ,  Issue: 1 )