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Quasi-Simultaneous Solution Method: A New Highly Efficient Strategy for Numerical MOST Simulations

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3 Author(s)
Meinerzhagen, B. ; Institut fur Theoretishe Elektrotecnik, University of Aachen, Aachen, Germany ; Dirks, H.K. ; Engl, W.L.

Most numerical MOS-simulators are based on Gummel's nonlinear relaxation method, for which severe convergence problems arise above threshold. A new hierarchical approach for the numerical simulation of MOS-transistors (MOST's) is presented, which overcomes these shortcomings resulting in an improvement of convergence speed of more than one order of magnitude.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:4 ,  Issue: 4 )

Date of Publication:

October 1985

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