By Topic

A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Laux, S.E. ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA ; Grossman, B.M.

A method for incorporating impact ionization into a general control-volume formulation of semiconductor transport is described. The methods for electric-field and current-density vector evaluation and generated charge partitioning within a two-dimensional triangular element are given. The techniques employed allow device breakdown to be accurately determined independent of mesh orientation to current flow direction. The avalanche breakdown of a 1-μm n-MOSFET illustrates the approach. Regions where the drain current is a multivalued function of drain voltage are directly and self-consistently calculated for this device.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:4 ,  Issue: 4 )