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Current Lines and Accurate Contact Current Evaluation in 2-D Numerical Simulation of Semiconductor Devices

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2 Author(s)
E. Palm ; EUROTECHNIQUE -- Thomson Semiconductors, F-13790 Rousset, France ; F. Van de Wiele

The conservation of the total current density in semiconductor devices implies that the current derives from a vector potential. The calculation of this current potential is a dual problem of the original device simulation problem. A simple and elegant discrete method is proposed for the 2-D case, which yields the current potential for a given, numerically calculated current density. The approach is based upon a least squares principle and is consistent with the assumptions leading to the discrete formulation of the semiconductor transport equations. Accurate values of the contact currents are obtained and a simple way to generate representations of current lines becomes available. The method has the advantage that it does not require any definition of paths for the integration of current files.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:4 ,  Issue: 4 )