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Semiconductor Device Simulation at NTT

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4 Author(s)
K. Yokoyama ; NTT Asugi Electrical Communication Laboratories, Atsugi-shi, Kanagawa, Japan ; M. Tomizawa ; A. Yoshii ; T. Sudo

The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In this paper, these simulators are introduced together with the more interesting results. Through these examples, it is demonstrated that the device simulation takes an important role for accurate modeling of semiconductor devices. This report also concludes that the choosing the best simulation program for a given problem is the key to obtain effectively an accurate solution.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:4 ,  Issue: 4 )