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Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon

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1 Author(s)
Albers, J. ; Semiconductor Devices and Circuits Division, National Bureau of Standards, Gaithersburg, MD, USA

The two-dimensional distributions of particles, primary damage, and electronic and nuclear energy loss were calculated for implantation of a line source into silicon targets by using TRIM Monte Carlo code. In addition, the Kinchin-Pease equation was used to calculate approximate two-dimensional distributions of the Frenkel pairs (vacancy-interstitial) created by the primary displacement damage of the target atoms. These distributions allowed for the calculation of the one-dimensional distributions of these quantities for implantation into unmasked targets. The two-dimensional particle and approximate Frenkel pairs distributions for implantation past a mask edge were constructed by means of superposition. The results are important for understanding the mass, energy, and dose dependence of implantation and the associated displacement damage.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:4 ,  Issue: 4 )

Date of Publication:

October 1985

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