By Topic

Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Albers, J. ; Semiconductor Devices and Circuits Division, National Bureau of Standards, Gaithersburg, MD, USA

The two-dimensional distributions of particles, primary damage, and electronic and nuclear energy loss were calculated for implantation of a line source into silicon targets by using TRIM Monte Carlo code. In addition, the Kinchin-Pease equation was used to calculate approximate two-dimensional distributions of the Frenkel pairs (vacancy-interstitial) created by the primary displacement damage of the target atoms. These distributions allowed for the calculation of the one-dimensional distributions of these quantities for implantation into unmasked targets. The two-dimensional particle and approximate Frenkel pairs distributions for implantation past a mask edge were constructed by means of superposition. The results are important for understanding the mass, energy, and dose dependence of implantation and the associated displacement damage.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:4 ,  Issue: 4 )