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Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation

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1 Author(s)
A. M. Mazzone ; Consiglio Nazionale Delle Ricerche, Istituto L.A.M.E.L., Bologna, Italy

This paper presents a simulation of the spontaneous annealing of damage generated during ion implantation and describes events such as clustering of defects of the same type and annihilation of defects of opposite type. The approach, which follows the line of the work by Metropolis et al., consists of generating a representative ensemble of points in the space of the configurational energy through random walks of the migrating species.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:4 ,  Issue: 4 )