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This paper presents a simulation of the spontaneous annealing of damage generated during ion implantation and describes events such as clustering of defects of the same type and annihilation of defects of opposite type. The approach, which follows the line of the work by Metropolis et al., consists of generating a representative ensemble of points in the space of the configurational energy through random walks of the migrating species.
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on (Volume:4 , Issue: 4 )
Date of Publication: October 1985