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A model for MOSFET's is presented which can accurately represent devices over a wide variety of process parameters, geometries, and regions of operation. The model is analytic in all regions, contains only 5 parameters, and is easily implemented in circuit simulation programs. Threshold shifts due to substrate bias for a wide variety of channel doping profiles can be represented by the unique mathematical function used in the expression for threshold voltage. Each parameter of the model dominates a specific region of the I-V curves, making the parameter extraction process a simpler matter of calculating each parameter from measurements in its own region of dominance. No optimization is needed. Curves generated by the model are compared with data from a specific process. Above threshold and subthreshold Id-Vds, threshold voltage versus substrate bias, and transconductance curves are presented.