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A CAD-Oriented Analytical MOSFET Model for High-Accuracy Applications

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2 Author(s)
Turchetti, C. ; Department of Electronics, University of Ancona, Ancona, Italy ; Masetti, G.

Explicit and accurate formulations for the surface potential against quasi-Fermi potential of the minority carriers in a long-channel MOS transistor are found. Moreover, it is shown that, for a variety of process parameters, these simple formulations, together with a suitable rearrangement of the Brews' model, can be fruitfully adopted for an accurate modeling of the MOST characteristics in all the operating regimes (weak inversion, moderate inversion, strong inversion).

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:3 ,  Issue: 2 )