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An Efficient Numerical Algorithm for Simulation of MOS Capacitance

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3 Author(s)
Jaeger, R.C. ; Electrical Engineering Department, Auburn University, Auburn, AL, USA ; Gaensslen, F.H. ; Diehl, Sherra E.

A new, computationally efficient method for the numerical evaluation of the equilibrium capacitance of one-dimensional MOS structures is presented. Capacitance-voltage (C-V) characteristics for arbitary impurity profiles and interface state distributions can be calculated for temperatures ranging from 50 K to 350 K. Examples of simulated C-V characteristics demonstrate the capability of the computer program MOSCAP using these techniques.

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:2 ,  Issue: 2 )