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A new, computationally efficient method for the numerical evaluation of the equilibrium capacitance of one-dimensional MOS structures is presented. Capacitance-voltage (C-V) characteristics for arbitary impurity profiles and interface state distributions can be calculated for temperatures ranging from 50 K to 350 K. Examples of simulated C-V characteristics demonstrate the capability of the computer program MOSCAP using these techniques.
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on (Volume:2 , Issue: 2 )
Date of Publication: April 1983