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Channel Length Dependence of the Body-Factor Effect in NMOS Devices

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1 Author(s)
Simard-Normandin, M. ; Research and Development Laboratory, Fairchild Camera and Instrument Corp., Palo Alto, CA, USA

The dependence of threshold voltage on substrate bias in NMOS devices is reevaluated in the light of a large sample of data for short-channel length devices (0.8 ?m < L < 8 ?m). Existing models [1], [2] do not fit the data with the necessary accuracy for circuit simulation of short channel devices. A new model involving only process parameters is presented which may also be used to evaluate xj and Nsub from a limited amount of observations if long channel devices are not available. Agreement with SUPREM is excellent.

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:2 ,  Issue: 1 )

Date of Publication:

January 1983

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