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Substrate Current Modeling for Circuit Simulation

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3 Author(s)
J. Mar ; Intel Corporation, Santa Clara, CA, USA ; Sheau-Suey Li ; Swei-Yam Yu

A new circuit simulation model is presented for impact ionization generated MOSFET substrate current. The model uses four parameters to accurately model substrate current over a wide range of device dimensions and operating voltages, including operation in the linear region. The model is able to model substrate currents from both heavily doped and lightly doped devices.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:1 ,  Issue: 4 )