By Topic

Network Analysis Approach to Multidimensional Modeling of Transistors Including Thermal Effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. Latif ; Electrical Engineering Department, University of Waterloo, Waterloo, Ont., Canada ; P. R. Bryant

A comprehensive numerical model for simulating the electrical and thermal behavior of a bipolar transistor is developed. The proposed model is in the form of an electrical network for its easy implementation using a circuit analysis program. One of the suggested solution techniques enables us to simulate a fairly large problem with a reasonable amount of computer time. The effect of temperature dependence of thermal conductivity of the device material upon thermal instability is shown. It is described how the model can be used to find the appropriate values of ballasting resistors desired for the improvement of thermal stability. Prediction of a safe operating area using the proposed model is also reported.

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:1 ,  Issue: 2 )