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Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

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7 Author(s)
Zhiyuan Cheng ; Microsystem Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Pitera, Arthur J. ; Lee, M.L. ; Jongwan Jung
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Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 3 )

Date of Publication:

March 2004

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