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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

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10 Author(s)
Huiling Shang ; Semicond. R&D Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Kam-Leung Lee ; P. Kozlowski ; C. D'Emic
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In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼104.

Published in:

IEEE Electron Device Letters  (Volume:25 ,  Issue: 3 )