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Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors

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4 Author(s)
Stiff-Roberts, A.D. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Su, X.H. ; Chakrabarti, S. ; Bhattacharya, P.

A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 3 )