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1530 V, 16.8 mΩ · cm2, 4H-SiC normally-off vertical junction field-effect transistor

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3 Author(s)
L. G. Fursin ; United Silicon Carbide Inc., New Brunswick, NJ, USA ; J. H. Zhao ; M. Weiner

The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 μm using a two-step junction termination extension. The VJFET shows a low specific on-resistance RON_SP of 16.8 mΩ · cm2.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 4 )