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High frequency micromechanical piezo-on-silicon block resonators

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5 Author(s)
Humad, S. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Abdolvand, R. ; Ho, G.K. ; Piazza, G.
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This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003