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Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation

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7 Author(s)
Wei Yip Loh ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Byung Jin Cho ; Moon Sig Joo ; Li, M.F.
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Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003