A computational study of ballistic silicon nanowire transistors

Using a rigorous 3D quantum simulator, we report a computational study of ballistic silicon nanowire transistors with arbitrary cross sections (i.e., triangular, rectangular or cylindrical). In comparison with the planar double-gate MOSFET, the silicon nanowire transistor shows promise (e.g., better electrostatic scaling for a given Si body thickness) and may provide a manufacturable opportunity to scale silicon transistors down below the scaling limit of planar MOSFETs.