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The performance limits and engineering issues of ultra-thin body (UTB) double gated (DG) Ge channel n-MOSFETs are examined in this paper. The non-equilibrium Green's Function (NEGF) approach, including both L and /spl Delta/ conduction valleys, is employed for source to drain current, while the improved WKB tunneling is employed for substrate to drain (band-to-band BTB) and gate to channel current. All possible Ge surfaces and channel orientations are explored. Our results conclude that in addition to lower power supply voltage advantages, the engineered Ge<110> devices with suppressed BTB and gate leakages can achieve better intrinsic delay to OFF power ratio than Si<100> devices.