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A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET

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3 Author(s)
Krishnamohan, T. ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; Jungemann, C. ; Saraswat, K.C.

A novel, high performance sub-20 nm DMDG Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET is proposed. Full-band Monte Carlo and 1D Poisson-Schrodinger simulations show a 43% increase in I/sub on/ and /spl sim/2/spl times/ increase in switching speeds at 35% lower power dissipation compared to conventional Si DGFETs. The cut-off frequencies are in excess of 1000 GHz making the device also very suitable for analog applications.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003