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Physical insights on design and modeling of nanoscale FinFETs

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7 Author(s)
J. G. Fossum ; Florida Univ., Gainesville, FL, USA ; M. M. Chowdhury ; V. P. Trivedi ; T. -J. King
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An array of measured device data, a numerical device simulator, and a process/physics-based compact model are used to gain new and important physical insights on nanoscale FinFETs with undoped thin-fin bodies. The insights, which include unavoidable/needed gate underlap, bias-dependent effective channel length, and non-ohmic fin-extension voltage drops, reveal the significance of gate positioning on, and source/drain doping profile in, the thin fin, and imply novel compact modeling that will be needed for optimal design of nonclassical CMOS circuits.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003