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FinFET SONOS flash memory for embedded applications

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6 Author(s)
Peiqi Xuan ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Min She ; Harteneck, B. ; Liddle, A.
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FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003