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Hybrid silicon/molecular memories: co-engineering for novel functionality

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9 Author(s)
Gowda, S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Mathur, G. ; Qihang Li ; Surthi, S.
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The properties of silicon in hybrid CMOS/molecular capacitors were successfully engineered to produce multiple bit and long retention-time devices. Charge storage molecules were attached to silicon substrates to produce multiple bit and long retention time characteristics that may be attractive for nanoscale high density memory applications.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003