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Alleviating electromigration through re-engineering the interface between Cu & dielectric-diffusion-barrier in 90 nm Cu/SiOC (k=2.9) device

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14 Author(s)
Young Jin Wee ; Adv. Process Dev. Team, Samsun Electron. Co. Ltd., Kyunggi-Do, South Korea ; Soo Geun Lee ; Won Sang Song ; Kyoung-Woo Lee
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Despite the initial success in integrating a 90 nm Cu/SiOC (k=2.9) device using the HSQ via-filler scheme, the reliability issues remain. By correlating electromigration (EM) with the moisture blocking capability of the dielectric-diffusion-barrier, we target the factors contributing to the moisture blockage, namely, the N and H-content within SiC. Consequently, increasing the N/H ratio in the SiCN film, we demonstrated a significant enhancement in EM reliability.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003