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Dopant redistribution effects in preamorphized silicon during low temperature annealing

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12 Author(s)
Venezia, V.C. ; Philips Res. Leuven, Belgium ; Duffy, R. ; Pelaz, L. ; Aboy, M.
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The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003