Referenced Items are not available for this document.
The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.
Published in:
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Date of Conference: 8-10 Dec. 2003
- Page(s):
- 20.3.1 - 20.3.4
- Print ISBN:
- 0-7803-7872-5
- INSPEC Accession Number:
- 7862296
- Digital Object Identifier :
- 10.1109/IEDM.2003.1269328
- Product Type:
- Conference Publications
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