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Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode

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9 Author(s)
Ritenour, A. ; Microsystems Technol. Lab., MIT, Cambridge, MA, USA ; Yu, S. ; Lee, M.L. ; Lu, N.
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Germanium p-MOSFETs with a thin high-k dielectric (EOT/spl sim/1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (Gm) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003