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Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)

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9 Author(s)
Kedzierski, J. ; Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Boyd, D. ; Ronsheim, P. ; Zafar, S.
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Silicidation-induced impurity segregation was found to be an excellent method for adjusting the workfunction of NiSi gates. Continuous workfunction control over 300 mV was obtained with P, As, and Sb used as gate impurities. Fully depleted silicon-on-insulator devices were fabricated with a tunable V/sub t/.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003