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Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

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24 Author(s)
Samavedam, S.B. ; Adv. Products Res. & Dev. Lab., Motorola, Austin, TX, USA ; La, L.B. ; Tobin, P.J. ; White, B.
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We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003