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Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

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24 Author(s)
Samavedam, S.B. ; Adv. Products Res. & Dev. Lab., Motorola, Austin, TX, USA ; La, L.B. ; Tobin, P.J. ; White, B.
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We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO2, Al2O3 and HfO2 for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.

Published in:
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference: 8-10 Dec. 2003

Page(s):
13.1.1 - 13.1.4
Print ISBN:
0-7803-7872-5
INSPEC Accession Number:
7855057
Digital Object Identifier :
10.1109/IEDM.2003.1269286
Product Type:
Conference Publications

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