By Topic

Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
T. Wang ; Macronix Int. Co. Ltd., Hsin-Chu, Taiwan ; W. J. Tsai ; S. H. Gu ; C. T. Chan
more authors

The reliability issues of two-bit storage nitride flash memory cells, including low-V/sub t/ state threshold voltage instability, read-disturb, and high-V/sub t/ state charge loss are addressed. The responsible mechanisms and reliability models are discussed. Our study shows that the cell reliability is strongly dependent on operation methods and process conditions.

Published in:

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Date of Conference:

8-10 Dec. 2003